Location

Williamsburg, VA

Start Date

1-1-1988 12:00 AM

Description

The defect structure of gallium arsenide is being examined using white beam transmission topography. The specimens under examination are cut-and-polished, three inch diameter, single crystal substrates from various suppliers in the “as received” condition. The goal of this continuing program is to first document the existence of various crystallographic defect structures and then to establish their effect on the performance of microwave integrated circuits subsequently fabricated on the wafers. Success in establishing such a correlation might permit the use of an x-ray diffraction measurement to screen incoming material, eliminating marginal substrates and achieving a corresponding increase in yield.

Book Title

Review of Progress in Quantitative Nondestructive Evaluation

Volume

7B

Chapter

Chapter 6: Electronic Materials and Devices

Pages

1153-1160

DOI

10.1007/978-1-4613-0979-6_33

Language

en

File Format

application/pdf

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Jan 1st, 12:00 AM

White Beam Synchrotron X-Ray Topography of Gallium Arsenide

Williamsburg, VA

The defect structure of gallium arsenide is being examined using white beam transmission topography. The specimens under examination are cut-and-polished, three inch diameter, single crystal substrates from various suppliers in the “as received” condition. The goal of this continuing program is to first document the existence of various crystallographic defect structures and then to establish their effect on the performance of microwave integrated circuits subsequently fabricated on the wafers. Success in establishing such a correlation might permit the use of an x-ray diffraction measurement to screen incoming material, eliminating marginal substrates and achieving a corresponding increase in yield.