Location

La Jolla, CA

Start Date

1-1-1989 12:00 AM

Description

The investigation of defects in silicon by modulated optical reflectance measurements has proven to be a powerful and easy-to-use method of nondestructive materials characterization. This technique has been used to monitor ion implant dose [1] and measure polishing damage [2] in silicon wafers, and to map O2 swirl precipitates in Czochralski-grown silicon [3]. Laser-induced modulated reflectance offers advantages over some related thermal-wave techniques: it is contactless, and because it can be performed at modulation frequencies of several MHz, it offers micron-scale resolution. Its noncontact and nondestructive nature makes this technique attractive for production-line use in the semiconductor industry.

Volume

8B

Chapter

Chapter 6: Electronic Materials and Devices

Section

Electronic Materials and Devices

Pages

1263-1271

DOI

10.1007/978-1-4613-0817-1_158

Language

en

File Format

application/pdf

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Jan 1st, 12:00 AM

Subsurface Defects in Silicon Investigated by Modulated Optical Reflectance Measurements

La Jolla, CA

The investigation of defects in silicon by modulated optical reflectance measurements has proven to be a powerful and easy-to-use method of nondestructive materials characterization. This technique has been used to monitor ion implant dose [1] and measure polishing damage [2] in silicon wafers, and to map O2 swirl precipitates in Czochralski-grown silicon [3]. Laser-induced modulated reflectance offers advantages over some related thermal-wave techniques: it is contactless, and because it can be performed at modulation frequencies of several MHz, it offers micron-scale resolution. Its noncontact and nondestructive nature makes this technique attractive for production-line use in the semiconductor industry.