Location

La Jolla ,CA

Start Date

1-1-1989 12:00 AM

Description

Recently, a powerful method of photothermal detection was reported which enabled thermal wave imaging to be carried out on micron sized structures in semiconductors [1,2]. The new method utilized the photothermally induced modulation of the sample’s surface optical reflectivity to detect thermal wave phenomena at bandwidths exceeding 10 MHz. The wide bandwidth capabilities of the method enabled very shallow structures to be analyzed in semiconducting materials because of the relationship that exists between the modulation frequency of the excitation beam and the thermal diffusion length.

Book Title

Review of Progress in Quantitative Nondestructive Evaluation

Volume

8A

Chapter

Chapter 2: Advanced Techniques

Section

Other New Techniques

Pages

619-625

DOI

10.1007/978-1-4613-0817-1_78

Language

en

File Format

application/pdf

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Jan 1st, 12:00 AM

Impulse Photothermal Evaluation of Materials Via Frequency Modulated Optical Reflectance II: Experimental

La Jolla ,CA

Recently, a powerful method of photothermal detection was reported which enabled thermal wave imaging to be carried out on micron sized structures in semiconductors [1,2]. The new method utilized the photothermally induced modulation of the sample’s surface optical reflectivity to detect thermal wave phenomena at bandwidths exceeding 10 MHz. The wide bandwidth capabilities of the method enabled very shallow structures to be analyzed in semiconducting materials because of the relationship that exists between the modulation frequency of the excitation beam and the thermal diffusion length.