Location

La Jolla, CA

Start Date

1-1-1991 12:00 AM

Description

Gallium arsenide grown by the high pressure liquid encapsulated Czochralski (HPLEC) process suffers from a low yield of electrically useful material and widely varying opto-electronic properties. These types of problems are typical of emerging materials/new processes, and in this case, can be traced back to inadequate process control during crystal growth. In particular, it is important to measure and control local solidifications during crystal growth in order to maintain an optimum liquid-solid interface shape that results in single crystal solidification and more uniform electro-optic properties [1].

Book Title

Review of Progress in Quantitative Nondestructive Evaluation

Volume

10B

Chapter

Chapter 5: Electronic and Ceramic Materials

Pages

1159-1166

DOI

10.1007/978-1-4615-3742-7_3

Language

en

File Format

application/pdf

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Jan 1st, 12:00 AM

The EDDY Current Sensing of Gallium Arsenide Crystal Growth: Calculated Response

La Jolla, CA

Gallium arsenide grown by the high pressure liquid encapsulated Czochralski (HPLEC) process suffers from a low yield of electrically useful material and widely varying opto-electronic properties. These types of problems are typical of emerging materials/new processes, and in this case, can be traced back to inadequate process control during crystal growth. In particular, it is important to measure and control local solidifications during crystal growth in order to maintain an optimum liquid-solid interface shape that results in single crystal solidification and more uniform electro-optic properties [1].