Location

La Jolla, CA

Start Date

1-1-1993 12:00 AM

Description

Today’s infrared detector arrays consist of Hg1-xCdxTe deposited upon lattice matched Cd1-xZnxTe substrate wafers. Very high quality Cd1-xZnxTe crystals must be grown so that substrate wafer defects do not degrade the detector’s performance. Usually, the Cd1-xZnxTe crystals are grown by a Bridgman technique in which a charge is melted in a cylindrical quartz ampoule and slowly withdrawn from the hot zone (at ~ 1100°C) of a furnace.1 The best quality crystal is obtained from material solidified under plane front conditions.2 This is difficult to achieve, and a need has arisen for insitu sensing of the growth process to characterize, and ultimately control, the interface shape.

Book Title

Review of Progress in Quantitative Nondestructive Evaluation

Volume

12B

Chapter

Chapter 6: Material Properties

Section

Ceramics and Semiconductors

Pages

1711-1718

DOI

10.1007/978-1-4615-2848-7_219

Language

en

File Format

application/pdf

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Jan 1st, 12:00 AM

Ultrasonic Sensing Simulation of CdTe Single Crystal Growth

La Jolla, CA

Today’s infrared detector arrays consist of Hg1-xCdxTe deposited upon lattice matched Cd1-xZnxTe substrate wafers. Very high quality Cd1-xZnxTe crystals must be grown so that substrate wafer defects do not degrade the detector’s performance. Usually, the Cd1-xZnxTe crystals are grown by a Bridgman technique in which a charge is melted in a cylindrical quartz ampoule and slowly withdrawn from the hot zone (at ~ 1100°C) of a furnace.1 The best quality crystal is obtained from material solidified under plane front conditions.2 This is difficult to achieve, and a need has arisen for insitu sensing of the growth process to characterize, and ultimately control, the interface shape.