Degree Type

Thesis

Date of Award

1-1-2002

Degree Name

Master of Science

Department

Electrical and Computer Engineering

Major

Electrical Engineering

Abstract

We have studied the effects of methanol on the wet oxidation of AlAs and AlSb. Selective oxidation of Al-based semiconductor layers is an important element in the fabrication of semiconductor lasers. While oxidation of AlAs has been studied extensively and is utilized widely for laser fabrication, the oxidation of AlSb is less well understood and has been more problematic. Oxidation of AlSb using pure water vapor as oxidizer has shown incomplete reaction and antimony residues were left behind. In this work, we look at the effects of adding to methanol to the reaction as a possible means of improving the AlSb oxidation process. We also oxidized AlAs a means to better understand the effects of methanol. Samples of AlAs and AlSb were oxidized in water/methanol mixture of various compositions. Optical and electron microscopy was used to characterize the oxidized samples. In the end, we observed that the addition of methanol improved the quality of our oxidized AlAs layers, but seemed to have negligible improved on the AlSb films. We also report on our characterization of evaporated silicon dioxide and tantalum oxide films for use in thin-film optical devices.

DOI

https://doi.org/10.31274/rtd-20200803-34

Copyright Owner

Qi Chen

Language

en

OCLC Number

51796935

File Format

application/pdf

File Size

32 pages

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