Nondestructive evaluation (NDE) is frequently used to examine components that experience significant stresses to ensure they are capable of safely performing their required tasks. The eddy-current technique of NDE utilizes an induced magnetic field to detect flaws or defects such as stress fractures in components. Semiconductor Hall sensors are one method for detecting magnetic fields induced by eddy-currents. While a single sensor can be used to detect the presence of a defect, an array of Hall sensors can potentially provide images of defects. Single Hall devices and arrays were fabricated using bulk GaAs and InAs quantum wells to achieve well-controlled, high sensitivity devices. The quantum wells are used to control the sheet concentration of the material. Negative lithography and metal liftoff processes were used during fabrication. Individual Hall bars, van der Pauw devices, Hall strips, and arrays of Hall bars were fabricated and characterized. These devices were characterized by measuring mobility, carrier concentration, sensitivity, and temperature dependence. InAs quantum well device sensitivities were measured to be on the order of 56 V/A·T, which is much greater than InAs devices available commercially. The temperature dependence of the sensitivity of InAs quantum well devices was found to be -0.028 V/A·T per degree C.