Date of Award
Doctor of Philosophy
Physics and Astronomy
Schottky barrier electroreflectance measurements have been performed on samples of GaAs and GaP under uniaxial stress. The E(,o) structure of GaP and the E(,2) structure of GaAs were investigated. Values which are in good agreement with the literature were obtained for the linear contribution to the deformation potential of the E(,o) peak of GaP. No stress-induced splittings were resolved in the E(,2) structure of GaAs due to the large value of the broadening parameter (200 mV). Empirical nonlocal pseudopotential calculations were used to locate two nearly-degenerate critical points which may contribute to the E(,2) structure. The predicted behavior of these critical points under uniaxial stress was calculated.
Digital Repository @ Iowa State University, http://lib.dr.iastate.edu/
Michael John Bohan
Bohan, Michael John, "Effects of uniaxial stress on the Schottky-Barrier electroreflectance spectra of GaAs and GaP " (1981). Retrospective Theses and Dissertations. 7155.