Degree Type

Dissertation

Date of Award

1981

Degree Name

Doctor of Philosophy

Department

Physics and Astronomy

Abstract

Schottky barrier electroreflectance measurements have been performed on samples of GaAs and GaP under uniaxial stress. The E(,o) structure of GaP and the E(,2) structure of GaAs were investigated. Values which are in good agreement with the literature were obtained for the linear contribution to the deformation potential of the E(,o) peak of GaP. No stress-induced splittings were resolved in the E(,2) structure of GaAs due to the large value of the broadening parameter (200 mV). Empirical nonlocal pseudopotential calculations were used to locate two nearly-degenerate critical points which may contribute to the E(,2) structure. The predicted behavior of these critical points under uniaxial stress was calculated.

DOI

https://doi.org/10.31274/rtd-180813-5690

Publisher

Digital Repository @ Iowa State University, http://lib.dr.iastate.edu/

Copyright Owner

Michael John Bohan

Language

en

Proquest ID

AAI8122502

File Format

application/pdf

File Size

102 pages

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