High efficiency microwave power amplifier design
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Abstract
The zero biased common base microwave transistor tuned power amplifier is developed using the unilateral equivalent model. Amplifier design oriented application concepts are developed for the model use and supported by amplifier performance measurements;Transistor amplifier RF to dc conversion efficiency ((eta)) is correlated to reflect the operational parameters of the amplifier. These correlated results provide a new mathematically developed efficiency definition which defines the interactive relationship of frequency, power output level and the collector-to-base capacitance;Improved amplifier operational insight provided by the new efficiency derivation aids the designer in selecting the best available transistor for the design application. Additional insight and design data necessary to obtain specific design performance criteria, i.e., bandwidth, gain, etc., are provided.